? 1998 ixys all rights reserved c2 - 14 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 5 ma 200 v v gs(th) v ds = v gs , i d = 4 ma 2.0 4.0 v i gss v gs = 20 v dc, v ds = 0 100 na i dss v ds = 0.8 v dss t j = 25c 500 m a v gs = 0 v t j = 125c 3 ma r ds(on) v gs = 10 v, i d = 0.5 i d25 35 m w pulse test, t 300 ms, duty cycle d 2% to-247ad (ixth) features ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? international standard package ? fast switching times applications ? motor controls ? dc choppers ? uninterruptable power supplies (ups) ? switch-mode and resonant-mode advantages ? easy to mount with one screw (isolated mounting screw hole) ? space savings ? high power density 95512c (12/97) high current megamos tm fet n-channel enhancement mode ixys reserves the right to change limits, test conditions and dimensions. preliminary data symbol test conditions maximum ratings v dss t j = 25c to 150c 200 v v dgr t j = 25c to 150c; r gs = 1.0 m w 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25c 74n20 74 a 68n20 68 a i dm t c = 25c, pulse width limited by t jm 74n20 296 a 68n20 272 a p d t c = 25c 74n20 416 w 68n20 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13/10 nm/lb.in. weight to-264 10 g to-247 6 g max lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s d (tab) v dss i d25 r ds(on) ixtk 74 n20 200 v 74 a 35 m w ixth 68 n20 200 v 68 a 35 m w to-264 aa (ixtk) s g d d (tab) g = gate d = drain s = source tab = drain www..net
? 1998 ixys all rights reserved c2 - 15 c2 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 35 42 s c iss 5450 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1275 pf c rss 630 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 230 ns t d(off) r g = 1 w (external) 180 ns t f 50 ns q g(on) 300 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 75 nc q gd 100 nc r thjc to-264 aa 0.30 k/w r thck 0.15 k/w r thjc to-247 ad 0.35 k/w r thck 0.15 k/w source-drain diode ratings and characteristics (t j = 25c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 74n20 74 a 68n20 68 a i sm repetitive; pulse width limited by t jm 74n20 296 a 68n20 272 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , -di/dt = 100 a/s, v r = 100v 600 ns dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad (ixth) outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 ixth 68n20 ixtk 74n20 ixys mosfets and igbts are covered by one of the following u.s.patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim.
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